Derivation of the Resonance Mechanism for Wireless Power Transfer Using Class-E Amplifier

In this study, we investigated the resonance mechanism of 6.78 MHz resonant wireless power transfer (WPT) systems. The depletion mode a gallium nitride high-electron-mobility transistor (GaN HEMT) was used to switch states in class-E amplifier circuit high frequency. D-mode GaN HEMT without body diode prevented current leakage from capacitor when drain-source voltage became negative. zero-voltage switching control derived according waveform across use conduction. effect frequency and duty cycle on achieve highest WPT efficiency. result shows that efficiency (PTE) is higher than 80% range 40 cm distance, delivered load (PDL) measured for different distances. It also possible cover applications related battery charging others using proposed design.